DETERMINATION OF NONLINEAR GAIN COEFFICIENT OF SEMICONDUCTOR-LASERS FROM ABOVE-THRESHOLD SPONTANEOUS EMISSION MEASUREMENT

Authors
GIRARDIN F DUAN GH CHABRAN C GALLION P BLEZ M ALLOVON M
Citation
F. Girardin et al., DETERMINATION OF NONLINEAR GAIN COEFFICIENT OF SEMICONDUCTOR-LASERS FROM ABOVE-THRESHOLD SPONTANEOUS EMISSION MEASUREMENT, IEEE photonics technology letters, 6(8), 1994, pp. 894-896
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
8
Year of publication
1994
Pages
894 - 896
Database
ISI
SICI code
1041-1135(1994)6:8<894:DONGCO>2.0.ZU;2-Q
Abstract
The measurement of spontaneous emission power above threshold has show n a nearly linear increase with biasing current in a 1.55-mum InGaAs/I nGaAlAs multiple quantum-well laser. Based on this measurement, we pro pose a novel experimental method to determine the nonlinear gain coeff icient. The obtained value is 1.2 x 10(-17) cm3 for the laser used. Th is value corresponds reasonably to that obtained by chirp-to-modulated -power ratio method, confirming the validity of this new measurement m ethod.