STRAINED-LAYER (1.5 MU-M) INP INGAASP LASING OPTOELECTRONIC SWITCH (LOES)/

We present for the first time a Lasing Opto-Electronic Switch (LOES) f abricated in the InP/InGaAsP system. In this device the active region is composed of four 63 angstrom compressively strained quantum wells. A lasing threshold of 104 mA, or 6933 A/cm2, has been observed at a te mperature of 298 K, with an external differential quantum efficiency o f 14%. The lasing wavelength is centered at 1.52 mum. The current-volt age characteristics manifest pronounced differential negative resistan ce, characterized by switching and holding voltages of 6.8 V and 1.6 V , respectively, and a switching current density of 33 A/cm2. The OFF a nd ON state resistances are approximately 150 kOMEGA and 4 OMEGA, resp ectively.