7.1 GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER/

Authors
COWLES J GUTIERREZAITKEN AL BHATTACHARYA P HADDAD GI
Citation
J. Cowles et al., 7.1 GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER/, IEEE photonics technology letters, 6(8), 1994, pp. 963-965
Citations number
16
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
8
Year of publication
1994
Pages
963 - 965
Database
ISI
SICI code
1041-1135(1994)6:8<963:7GBMII>2.0.ZU;2-Y
Abstract
A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-b ased transimpedance amplifier has been fabricated and characterized. T he p-i-n photodiode is implemented using the base-collector junction o f the HBT. The 5 mum x 5 mum emitter area transistors have self-aligne d base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors d emonstrated f(T) and f(max) of 54 GHz and 51 GHz, respectively. The am plifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dBOMEGA. The integrated photoreceiver with a 10 mum x 10 mu m p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz.