FERROELECTRIC MEMORIES FOR IDENTIFICATION SYSTEMS .1. SYSTEM OVERVIEWAND APPLICATIONS

The first part of this paper describes the function and application of an inductive identification system whose mobile, batteryless miniatur e data carriers operate both with non-volatile NMOS-EEPROM memory cell s and with new, non volatile ferroelectric dual-transistor FRAM memory cells. The FRAM cell offers 100 million write cycles, a value which i s 100 times better than the limit of a NMOS-EEPROM cell. The second pa rt of this paper contains an equivalent circuit diagram of the ferroel ectric memory cell. The basic signal characteristics of the read and w rite processes are described here with reference to a new sense amplif ier of a non-volatile single-transistor memory cell with ferro-capacit or. This proposal permits the required chip area of an FRAM device to be practically halved, thus increasing the process yield and reducing manufacturing costs by more than 50%.