RESEARCH ON YSZ THIN-FILMS PREPARED BY PLASMA-CVD PROCESS

YSZ (Y2O3-stabilized ZrO2) films were successfully prepared on a varie ty of substrates at a low temperature ( < 500 degrees C) by microwave plasma metallorganic chemical vapour deposition (MW-P-MOCVD) with beta -diketone chelates as volatile sources. The layers consist of nanoscal e crystallite and the typical deposition rate is 3-6 mu m h(-1). At ab out 280 degrees C the film interface relaxed, and at 510 degrees C the associated oxygen vacancies were activated. The film grew in a column ar manner. The growth behaviour and phases of the deposits are discuss ed by proposing a model for the deposition process based on the experi mental evidence.