ION-BEAM MIXING MODIFICATION OF SPUTTER-DEPOSITED MOLYBDENUM FILMS ONSI3N4 CERAMICS

Authors
Citation
Mw. Bai et Xs. Zhang, ION-BEAM MIXING MODIFICATION OF SPUTTER-DEPOSITED MOLYBDENUM FILMS ONSI3N4 CERAMICS, Thin solid films, 249(2), 1994, pp. 183-186
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
249
Issue
2
Year of publication
1994
Pages
183 - 186
Database
ISI
SICI code
0040-6090(1994)249:2<183:IMMOSM>2.0.ZU;2-5
Abstract
Molybdenum films deposited on Si3N4 ceramics have been given an N+ ion beam mixing (IBM) treatment with an energy of 120 keV and doses of 2 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2). The IBM modified surf aces were investigated by X-ray photoelectron spectroscopy, Auger elec tron spectroscopy and X-ray diffraction. The scratch tests show that N implantation increased adhesion of film to ceramics significantly. Th e reciprocating friction tests show that IBM modified Si3N4 exhibited friction reduction under no lubrication. The good adhesion strength ca n be attributed to the formation of an Mo-C compound in the Mo-Si3N4 i nterface, Mo-N solid solution in the molybdenum films, and recoil impl antation of molybdenum into ceramics.