EFFECT OF TEMPERATURE ON PHOTOCONDUCTION AND LOW-FREQUENCY CAPACITANCE MEASUREMENTS ON BETA-CUPC PHOTOVOLTAIC CELLS

Citation
As. Riad et al., EFFECT OF TEMPERATURE ON PHOTOCONDUCTION AND LOW-FREQUENCY CAPACITANCE MEASUREMENTS ON BETA-CUPC PHOTOVOLTAIC CELLS, Thin solid films, 249(2), 1994, pp. 219-223
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
249
Issue
2
Year of publication
1994
Pages
219 - 223
Database
ISI
SICI code
0040-6090(1994)249:2<219:EOTOPA>2.0.ZU;2-C
Abstract
The electrical properties of In/beta-CuPc-PVAc/Au (where CuPc is coppe r phthalocyanine and PVAc is polyvinylacetate) devices in the dark and under illumination have been studied. The temperature dependence of t he photocurrent was attributed to a high trap density. Electron traps located at 0.25 eV below the conduction band have been observed. Schot tky barrier parameters of the cell in the dark and under different mon ochromatic light intensities have been determined by a low frequency d ifferential capacitance method. Light intensity increased significantl y the space change density, which is a major concern as a possible lim iting factor for the performance of organic solar cells.