SATURABLE ABSORBERS BASED ON IMPURITY AND DEFECT CENTERS IN CRYSTALS

Citation
Mi. Demchuk et al., SATURABLE ABSORBERS BASED ON IMPURITY AND DEFECT CENTERS IN CRYSTALS, IEEE journal of quantum electronics, 30(9), 1994, pp. 2120-2126
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
9
Year of publication
1994
Pages
2120 - 2126
Database
ISI
SICI code
0018-9197(1994)30:9<2120:SABOIA>2.0.ZU;2-V
Abstract
Saturation of near-infrared absorption and transmission dynamics are i nvestigated in tetravalent-chromium-doped Gd3Sc2Ga3O12, Gd3Sc2Al3O12, and Mg2SiO4 crystals, as well as in reduced SrTiO3 using 20 ps 1.08 mu m laser pulses. An absorption cross section of (5 +/- 0.5) x 10(-18) c m2 in garnets and (2.3 +/- 0.3) x 10(-18) cm2 in forsterite is estimat ed for the 3A2-3T2 transition of tetrahedral Cr4+. Q-switched and ultr a-short pulses are realized in neodymium lasers using chromium-doped c rystals as the saturable absorbers. Saturation of free-carrier absorpt ion with ultrashort relaxation time is observed in SrTiO3 at 10(8)-10( 10) W/cm2 pump intensities, while at 10(10)-10(11) W/cm2 three-photon interband transitions predominate. The free-carrier absorption cross s ection is estimated to be (2.7 +/- 0.3) x 10(-18) cm2.