LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX

Citation
Ag. Zhdan et al., LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX, Instruments and experimental techniques, 37(2), 1994, pp. 252-255
Citations number
7
Categorie Soggetti
Instument & Instrumentation",Engineering
ISSN journal
00204412
Volume
37
Issue
2
Year of publication
1994
Part
2
Pages
252 - 255
Database
ISI
SICI code
0020-4412(1994)37:2<252:LCFSOI>2.0.ZU;2-I
Abstract
A general-purpose sealed cell for studying the static and dynamic phot oconductivity at temperatures of 4.3-80-degrees-K under the background and IR irradiation designed for operation in a transport Dewar (STG-2 5 or STG-40). The device has been tested by measuring the static photo electric gain of Si:Ga samples using a built-in black-body simulator. The black-body temperature varied between 60 and 90-degrees-K, which c orresponds to radiation fluxes of 5 . 10(-10) to 2 . 10(-9) W. The mea sured gain is in agreement with independent measurements of impurity p hotoconductivity relaxation to within 10%.