Ag. Zhdan et al., LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX, Instruments and experimental techniques, 37(2), 1994, pp. 252-255
A general-purpose sealed cell for studying the static and dynamic phot
oconductivity at temperatures of 4.3-80-degrees-K under the background
and IR irradiation designed for operation in a transport Dewar (STG-2
5 or STG-40). The device has been tested by measuring the static photo
electric gain of Si:Ga samples using a built-in black-body simulator.
The black-body temperature varied between 60 and 90-degrees-K, which c
orresponds to radiation fluxes of 5 . 10(-10) to 2 . 10(-9) W. The mea
sured gain is in agreement with independent measurements of impurity p
hotoconductivity relaxation to within 10%.