EXISTENCE OF GA-VACANCY AND AS-TRIMER INDUCED (2X2) PHASES ON THE GAAS(111)A SURFACE

Authors
THORNTON JMC UNSWORTH P JACKSON MD WEIGHTMAN P WOOLF DA
Citation
Jmc. Thornton et al., EXISTENCE OF GA-VACANCY AND AS-TRIMER INDUCED (2X2) PHASES ON THE GAAS(111)A SURFACE, Surface science, 316(3), 1994, pp. 231-237
Citations number
14
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
316
Issue
3
Year of publication
1994
Pages
231 - 237
Database
ISI
SICI code
0039-6028(1994)316:3<231:EOGAAI>2.0.ZU;2-A
Abstract
The GaAs(111)A-(2 x 2) surface has been examined using scanning tunnel ling microscopy (STM), and found to exhibit two phases with the same p eriodicity. At high surface As concentrations images consistent with a n As-trimer structure are seen, which transforms into a Ga-vacancy str ucture as the excess As desorbs at higher temperatures. Both filled an d empty state images of the vacancy structure are of atomic resolution , and reveal a relaxation in the surface bilayer in agreement with pre dictions.