A. Guivarch et al., ERSB GASB(001) AND GASB/ERSB/GASB(001) HETEROSTRUCTURES AND [ERSB,GASB] SUPERLATTICES - MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION/, Journal of applied physics, 75(6), 1994, pp. 2876-2883
Successful growth of ErSb(001) single crystal layers on GaSb(001) subs
trates has been demonstrated. The reflection high-energy electron diff
raction patterns show a (4 X 4) surface reconstruction. Reflection hig
h-energy electron diffraction oscillations, x-ray diffraction, and Rut
herford backscattering with channeling indicate single crystal monolay
er-by-monolayer growth and continuity of the Sb sublattice at the ErSb
/GaSb interface. The ErSb has a low room temperature resistivity equal
to 30 muOMEGA cm but may be used as a metallic reflector only for wav
elengths greater than 2.4 mum. The overgrowth of GaSb on ErSb leads to
mirrorlike surfaces but the overlayers contain symmetry-related defec
ts, On the contrary, nearly perfect GaSb overlayers were grown on [ErS
b,GaSb] superlattices which exhibit metallic behavior.