ERSB GASB(001) AND GASB/ERSB/GASB(001) HETEROSTRUCTURES AND [ERSB,GASB] SUPERLATTICES - MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION/

Citation
A. Guivarch et al., ERSB GASB(001) AND GASB/ERSB/GASB(001) HETEROSTRUCTURES AND [ERSB,GASB] SUPERLATTICES - MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION/, Journal of applied physics, 75(6), 1994, pp. 2876-2883
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
6
Year of publication
1994
Pages
2876 - 2883
Database
ISI
SICI code
0021-8979(1994)75:6<2876:EGAGHA>2.0.ZU;2-T
Abstract
Successful growth of ErSb(001) single crystal layers on GaSb(001) subs trates has been demonstrated. The reflection high-energy electron diff raction patterns show a (4 X 4) surface reconstruction. Reflection hig h-energy electron diffraction oscillations, x-ray diffraction, and Rut herford backscattering with channeling indicate single crystal monolay er-by-monolayer growth and continuity of the Sb sublattice at the ErSb /GaSb interface. The ErSb has a low room temperature resistivity equal to 30 muOMEGA cm but may be used as a metallic reflector only for wav elengths greater than 2.4 mum. The overgrowth of GaSb on ErSb leads to mirrorlike surfaces but the overlayers contain symmetry-related defec ts, On the contrary, nearly perfect GaSb overlayers were grown on [ErS b,GaSb] superlattices which exhibit metallic behavior.