STUDY OF HYDROGENATION ON NEAR-SURFACE STRAINED AND UNSTRAINED QUANTUM-WELLS

We have studied the effects of hydrogenation on the luminescence effic iency of near-surface strained InGaAs/GaAs and unstrained GaAs/AlGaAs quantum wells (QWs). By using two different materials with an analogou s structure, we have been able to clarify the effects of substrate tem perature, ion dosage, strain profile in the- material, and material qu ality on the local hydrogen concentration. This in turn modifies the b ehavior of hydrogen, the formation of hydrogen-related defects, and th e variation of luminescence efficiency from the near-surface QW.