SUBSTRATE PHOTOLUMINESCENCE - AN AID IN THE EVALUATION OF PULSED-LASER EVAPORATION AND EPITAXIAL-GROWTH OF CD1-XMNXTE EPILAYERS ON (111)GAAS

Photoluminescence (PL) emitted from (111)Cd1-xMnxTe/(111)GaAs:Si heter ojunctions produced using pulsed laser evaporation and epitaxy (PLEE) has been studied at 11.5 K. The heterojunctions show PL from the subst rate E0 and E0+DELTA0 gap regions as well as from the epilayer. The su bstrate E0+DELTA0 signal is particularly sensitive to the epilayer gro wth temperature and is strongest for samples grown on substrates held at T(g)=290-degrees-C. The heterojunction PL also includes a component produced by Si dopant atoms in the substrate that undergo clustering changes as the growth temperature is raised. Through comparison with a nnealing studies of the substrate, it is argued that the PLEE ablated material possesses sufficient kinetic energy to increase the effective temperature above T(g) at the growth surface.