ANNEALING EFFECTS ON SI-DOPED GAAS GROWN ON HIGH-INDEX PLANES BY MOLECULAR-BEAM EPITAXY

Authors
HARRISON I PAVESI L HENINI M JOHNSTON D
Citation
I. Harrison et al., ANNEALING EFFECTS ON SI-DOPED GAAS GROWN ON HIGH-INDEX PLANES BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(6), 1994, pp. 3151-3157
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
6
Year of publication
1994
Pages
3151 - 3157
Database
ISI
SICI code
0021-8979(1994)75:6<3151:AEOSGG>2.0.ZU;2-O
Abstract
A photoluminescence study of the effects of annealing on Si-doped (app roximately 10(16) cm-3) GaAs grown on (311)A-, (111)A-, (111)B-, and ( 100)-oriented substrates by molecular-beam epitaxy has been performed. The anneal temperatures were 873, 973, and 1098 K. All the anneals we re of 24 h duration. Detailed assessment of the low-temperature photol uminescence spectra suggests that site switching (Si switching from Ga site to As site) only occurs in the n-type samples [(100) and (111) B samples] and not in the p-type ones [(111)A and (311)A samples].