CHARACTERISTICS OF CONDUCTION MINIBANDS OF SI SI1-XGEX SUPERLATTICES/

Examined here are the characteristics of conduction bands of Si/Si1-xG ex, superlattices as affected by the type of well and barrier making u p the superlattices and their individual layer thicknesses. Common to all five basic structures studied is the presence of islands in the mi ddle of minibands that are forbidden energy gaps. Optical transitions across the islands can be utilized for photodetection in the very far infrared range. Merging of minibands of two adjacent states into a sin gle one is a distinct feature of double well-and-barrier superlattices .