Y. Kumagai et al., PLANAR TO COLUMNAR TRANSFORMATION OF PTSI IN THE EPITAXIAL-GROWTH PROCESS OF SI PTSI/SI(111) DOUBLE HETEROSTRUCTURES/, Journal of applied physics, 75(6), 1994, pp. 3211-3213
Epitaxial growth of Si on PtSi(010)/Si(111) structure, which was fabri
cated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/
Si= 1/1), was carried out in a molecular beam epitaxy system. At the s
ubstrate temperature of 400-degrees-C, Si grew epitaxially on the PtSi
layer and Si(111)/Ptsi(010)/Si(111) double heterostructure was obtain
ed. On the other hand, at the substrate temperature of 600-degrees-C,
the PtSi layer transformed into epitaxial columns and/or walls in the
process of Si deposition and evaporated Si filled the space among the
PtSi columns and/or walls epitaxially.