PLANAR TO COLUMNAR TRANSFORMATION OF PTSI IN THE EPITAXIAL-GROWTH PROCESS OF SI PTSI/SI(111) DOUBLE HETEROSTRUCTURES/

Epitaxial growth of Si on PtSi(010)/Si(111) structure, which was fabri cated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/ Si= 1/1), was carried out in a molecular beam epitaxy system. At the s ubstrate temperature of 400-degrees-C, Si grew epitaxially on the PtSi layer and Si(111)/Ptsi(010)/Si(111) double heterostructure was obtain ed. On the other hand, at the substrate temperature of 600-degrees-C, the PtSi layer transformed into epitaxial columns and/or walls in the process of Si deposition and evaporated Si filled the space among the PtSi columns and/or walls epitaxially.