MONOLITHIC GAAS ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP/

Authors
NICHOLS DT LOPATA J HOBSON WS DUTTA NK BERGER PR SIVCO DL CHO AY
Citation
Dt. Nichols et al., MONOLITHIC GAAS ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP/, Electronics Letters, 30(6), 1994, pp. 490-491
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
6
Year of publication
1994
Pages
490 - 491
Database
ISI
SICI code
0013-5194(1994)30:6<490:MGAOTC>2.0.ZU;2-T
Abstract
A strained GaAs/AlGaAs/InGaAs MQW laser has been monolithically integr ated with GaAs MESETs in a differential pair configuration to form a t ransmitter circuit. The structure used a single epitaxial growth step in which the laser was grown on top of the MESFET. The circuits operat e with bandwidths as high as 3.4GHz.