DYNAMIC CHARACTERIZATION OF SI SIGE POWER HBTS/

Authors
ERBEN U GRUHLE A SCHUPPEN A KIBBEL H KOENIG U
Citation
U. Erben et al., DYNAMIC CHARACTERIZATION OF SI SIGE POWER HBTS/, Electronics Letters, 30(6), 1994, pp. 525-527
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
6
Year of publication
1994
Pages
525 - 527
Database
ISI
SICI code
0013-5194(1994)30:6<525:DCOSSP>2.0.ZU;2-1
Abstract
Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE w ere dynamically characterised in the common-base configuration. At an emitter current density of 1.1x10(5) A/cm2, a maximum frequency of osc illation of 49GHz was observed. At 10GHz a maximum unilateral gain of 14dB is available, and a CW output power of 1.3W/mm for a device with 10 parallel emitter-fingers of 1x10mum2 each was predicted, from CW me asurements.