SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR

Authors
KIELY PA VANG TA MICOVIC M LEPORE A TAYLOR GW MALIK R DOCTER DP EVALDSSON PA CLAISSE PR BROWNGOEBELER KF STORZ F
Citation
Pa. Kiely et al., SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR, Electronics Letters, 30(6), 1994, pp. 529-531
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
6
Year of publication
1994
Pages
529 - 531
Database
ISI
SICI code
0013-5194(1994)30:6<529:SGLSOI>2.0.ZU;2-Z
Abstract
The scaling to 0.5mum of the inversion channel HFET with a single stra ined InGaAs quantum well is described. A unity current gain frequency of 40GHz, g(m) = 205mS/mm and V(TH) = -0.34V have been obtained for 0. 5 x 100mum2 devices. For shorter gate lengths, threshold shifts are si zeable so that in order to scale further, modifications to the growth and processing are required.