PHOTOELECTRON-SPECTRA OF ORGANOMETALLIC COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - VALENCE-BAND STUDIES

Citation
Dgj. Sutherland et al., PHOTOELECTRON-SPECTRA OF ORGANOMETALLIC COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - VALENCE-BAND STUDIES, Organometallics, 13(9), 1994, pp. 3671-3678
Citations number
30
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Inorganic & Nuclear
Journal title
ISSN journal
02767333
Volume
13
Issue
9
Year of publication
1994
Pages
3671 - 3678
Database
ISI
SICI code
0276-7333(1994)13:9<3671:POOCCS>2.0.ZU;2-6
Abstract
Valence band photoelectron spectra have been recorded at 21.2-, 100-, 120-, and 135-eV photon energies for the following five compounds: Si( CH3)(4), Si-2(CH3)(6), Si[Si(CH3)(3)](4), Ge[Si-(CH3)(3)](4), and [Si( CH3)(2)](6). The ground-state energies from the MS-X alpha method are used to assign the photoelectron spectra. The photon energy dependence of the intensities, combined with Gelius model intensity predictions from the MS-X alpha molecular orbital compositions, confirms the molec ular orbital ordering. The peak at lowest binding energy at similar to 8 eV (not present in Si(CH3)(4)) results from the Si-Si or Si-Ge bond ing orbitals. The second peak at similar to 10 eV results from orbital s associated primarily with Si-C bonds, while the next overlapping thr ee peaks mainly result from C-H bonding orbitals. In [Si(CH3)(2)](6), the second Si-C peak splits into two because of the two axial and equa torial positions of the methyl groups in the six-membered silicon ring .