Mp. Belyansky et al., INFLUENCE OF THE BOUNDARY ON THE INTERDIFFUSION IN HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 26(2-3), 1994, pp. 147-149
Interdiffusion processes in PbTe/PbTe/PbSe heterostructures were studi
ed. Chalcogen diffusion coefficients were calculated from Se and Te co
ncentration depth profiles recorded by the sputtered neutrals mass spe
ctrometry technique. The deposition of the PbTe layer on the PbTe subs
trate reduces the rate of the chalcogen diffusion and improves the per
fection of the structure.