LOW-ENERGY POSITRON BEAM STUDIES OF NANO-TIN FILMS

Authors
WENG HM WANG DZ HAN RD JIANG Y YANG GQ LIU XH
Citation
Hm. Weng et al., LOW-ENERGY POSITRON BEAM STUDIES OF NANO-TIN FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 26(2-3), 1994, pp. 163-166
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
26
Issue
2-3
Year of publication
1994
Pages
163 - 166
Database
ISI
SICI code
0921-5107(1994)26:2-3<163:LPBSON>2.0.ZU;2-B
Abstract
Nano-TiN films produced by Xe+ ion beam enhanced deposition were studi ed by the slow positron annihilation technique. The Doppler broadening of the annihilation gamma-ray energy spectra were characterized by th e line-shape parameter S. The results showed that there are two types of defect. One is related to interfaces and the other is related to na no void. Their concentrations and sizes are strongly dependent upon th e implanting energy and dosage.