F. Tcheliebou et A. Boyer, MICROSTRUCTURAL AND MECHANICAL EFFECTS OF OXIDE ADDITION INTO THIN ZRO2 MATRIX, Materials science & engineering. B, Solid-state materials for advanced technology, 26(2-3), 1994, pp. 175-180
Zirconia was stabilized in thin film form by three ceramic oxides (MgO
, CeO2, Gd2O3). Crystallographic and microstructural feature studies w
ere undertaken. X-ray diffraction analysis allowed the stabilization p
rocess to be followed as a function of dopant concentration in the ZrO
2 matrix. It was found that for the three systems of interest, the mol
e percentage of additive oxide needed to stabilize zirconia in a cubic
lattice is in agreement with the equilibrium phase diagrams, i.e. mor
e than 14 mol% for MgO, 18 mol% for CeO2 and 10 mol% for Gd2O3. Based
on X-ray diffraction measurements, a series of mixed films in ZrO2-MgO
, ZrO2-CeO2 and ZrO2-Gd2O3 produced by co-evaporation at 550 degrees C
was studied in order to determine the effect of dopant concentration
on lattice parameters, average particle size and residual stress. A cu
bic lattice parameter in the ZrO2-MgO system was found to decrease slo
wly with increasing MgO mole percentage whilst it increases linearly f
or the ZrO2-CeO2 and ZrO2-Gd2O3 systems. Particle size was found to be
lower than 200 Angstrom for the samples investigated but films were c
rystalline. A merely indicative stress study in stabilized samples sho
ws tensile stresses in the ZrO2-MgO system. Residual stresses were hig
hly compressive in the two other systems.