CHARACTERIZATION OF SPRAYED CDSB2S4 THIN-FILMS BY PHOTOELECTROCHEMICAL METHOD

Films of CdSb2S4 have been prepared onto FTO coated glass substrates b y spray pyrolysis technique at optimised substrate temperature and sol ution concentration. A photoelectrochemical cell with configuration: n -CdSb2S4/Electrolyte/C was formed. Using Gartner's theory, the calcula ted values of various semiconductor parameters were found to be: (1) t he majority carrier density = 3 x 10(15) cm-3, (2) minority carrier di ffusion length = 0.38 mu, (3) quantum efficiency = 2.2% and (4) bandga p energy = 1.65 eV. These results are in good agreement with those obt ained from other physical methods of characterisation.