PHONON-SCATTERING BY NEUTRAL DONORS IN N-TYPE SILICON

The scattering of phonons by neutral n-type impurities in silicon is s tudied. Following Keyes, who determined the phonon relaxation time for scattering by neutral impurities in n-type germanium, the relaxation time for the silicon band structure is developed. This scattering come s about due to the large effect of strain on the hydrogen-like donor g round-state energy level. The change in energy of the ground state due to the strain caused by phonons is calculated and the resulting phono n scattering relaxation rate is derived.