ELECTRICAL-TRANSPORT PROPERTIES OF DIPHASIC AMORPHOUS-MICROCRYSTALLINE SILICON-CARBON ALLOYS

Authors
DEMICHELIS F PIRRI CF TRESSO E
Citation
F. Demichelis et al., ELECTRICAL-TRANSPORT PROPERTIES OF DIPHASIC AMORPHOUS-MICROCRYSTALLINE SILICON-CARBON ALLOYS, International journal of modern physics b, 8(15), 1994, pp. 2059-2074
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Physycs, Mathematical","Physics, Applied
Journal title
International journal of modern physics b → ACNP
ISSN journal
02179792
Volume
8
Issue
15
Year of publication
1994
Pages
2059 - 2074
Database
ISI
SICI code
0217-9792(1994)8:15<2059:EPODA>2.0.ZU;2-6
Abstract
The dark conductivity of undoped diphasic amorphous-microcrystalline s ilicon carbon alloy films deposited by plasma-enhanced chemical vapor deposition has been studied as a function of temperature in the range 50-450 K, taking into account their composition, optical and structura l properties. From electrical measurements the transport properties we re examined and interpreted in terms of a band structure model which i ncludes three mechanisms of carrier transport in different ranges of t emperature. The comparison with experiments indicates that the results are consistent with the mechanisms and the model proposed.