A new counterflow jet reactor has been designed to study the purely ho
mogeneous kinetics of endothermic reactions. The reactor consists of t
wo vertical, coaxial, counterflowing, laminar jets and a radial-flow e
xit region. It can be used to generate a reaction zone near the stagna
tion point and away from walls, thus eliminating the possibility of su
rface reactions. One jet is heated and contains only a suitable carrie
r gas such as hydrogen and nitrogen, while the other is unheated and c
ontains the compound(s) under study diluted in the same carrier gas. A
2-D model of the process has been used to simulate the thermal decomp
osition of tertiary-butyl-arsine, a precursor for metal-organic chemic
al vapor deposition of GaAs films. Performance diagrams based on Reyno
lds and Damkohler numbers were constructed to identify optimal operati
ng conditions and to demonstrate the feasibility of the technique. Thi
s reactor appears to be an attractive choice for studies of the purely
homogeneous kinetics of endothermic reactions at pressures close to a
tmospheric.