A NEW DESIGN APPROACH FOR A HIGH-TRANSIMPEDANCE AND LOW-NOISE OPTOELECTRONIC INTEGRATED LIGHTWAVE RECEIVER WITH 24-GHZ BANDWIDTH

This article illustrates how the bandwidth of a high-transimpedance op toelectronic integrated circuit amplifier, involving a metal-semicondu ctor-metal (MSM) photodiode and heterojunction bipolar transistors (HB Ts), can be improved by incorporating the concept of emitter RC-networ k shunt peaking often used in common-emitter voltage amplifiers. In th e IC amplifier considered, the bandwidth has been shown to increase, w ith shunt peaking from 17.2 to 24 GHz, with no change of the equivalen t input noise current (almost-equal-to 2.3 pA/square-root Hz), arising mainly due to the input transistor's base current and the feedback re sistor. (C) 1994 John Wiley & Sons, Inc.