STABLE HIGH-POWER OPERATION OF SELF-ALIGNED STEPPED SUBSTRATE (S3) ALGALNP VISIBLE LASER-DIODE WITH SMALL BEAM ASPECT RATIO

Authors
FURAYA A FUKUSHIMA T KITO Y ANAYAMA C SUGANO M SUDO H KONDO M TANAHASHI T
Citation
A. Furaya et al., STABLE HIGH-POWER OPERATION OF SELF-ALIGNED STEPPED SUBSTRATE (S3) ALGALNP VISIBLE LASER-DIODE WITH SMALL BEAM ASPECT RATIO, Electronics Letters, 30(5), 1994, pp. 416-417
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
5
Year of publication
1994
Pages
416 - 417
Database
ISI
SICI code
0013-5194(1994)30:5<416:SHOOSS>2.0.ZU;2-F
Abstract
The authors have developed a selfaligned stepped substrate (S3) AlGaIn P laser diode with a small beam aspect ratio and stable high-temperatu re high-output-power operation. The laser had the index-guided laser s tructure, and was fabricated by only one-step MOVPE. The width of the laser waveguide was decreased to enlarge the beam divergence in the ho rizontal direction. Also, the strained multiquantum well active layer was modified to reduce the high temperature operation current by intro ducing GaInAsP well layers. As a result, the laser had a beam aspect r atio of 1.5 and stable 35mW operation for more than 1000h at 50-degree s-C.