GRADED PSEUDOMORPHIC CHANNEL ALLNP ALLNAS GALNAS HEMTS WITH HIGH CHANNEL BREAKDOWN VOLTAGE/

Authors
CHOUGH KB HONG BWP CANEAU C SONG JI JEON KI HONG SC LEE K
Citation
Kb. Chough et al., GRADED PSEUDOMORPHIC CHANNEL ALLNP ALLNAS GALNAS HEMTS WITH HIGH CHANNEL BREAKDOWN VOLTAGE/, Electronics Letters, 30(5), 1994, pp. 453-454
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
5
Year of publication
1994
Pages
453 - 454
Database
ISI
SICI code
0013-5194(1994)30:5<453:GPCAAG>2.0.ZU;2-S
Abstract
The Letter reports effects of the composition grading of the channel o n the device characteristics of Al0.48In0.52As/Ga1-xInxAs pseudomorphi c HEMTs. Systematic studies reveal that the modification of the quantu m-well channel by grading the composition considerably changes the cha nnel breakdown (BV(ds)) and output conductance (G(o)) characteristics. HEMTs with graded Ga1-xInxAs channel (from x = 0.7 to x = 0.6) exhibi ted significantly improved BV(ds) (IIV) and g(o) (40 mS/mm) compared w ith HEMTs with uniform composition (x = 0.7) in the channel (BV(ds) = 4V and g(o) = 80 mS/mm).