NEW PIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION

Authors
MANNA I JUNG L BHATTACHARYA S BANERJEE S
Citation
I. Manna et al., NEW PIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION, Electronics Letters, 30(5), 1994, pp. 457-459
Citations number
1
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
5
Year of publication
1994
Pages
457 - 459
Database
ISI
SICI code
0013-5194(1994)30:5<457:NPMSFH>2.0.ZU;2-J
Abstract
As an alternative to lightly doped drain (LDD) structures, a new pin M OSFET structure has been developed with near-intrinsic doping in the c hannel near the source/drain ends. This new structure has better hot c arrier suppression, current drive capability and short channel effects compared to LDD MOSFETs.