THE NEW DOUBLE-SIDED SILICON MICROVERTEX DETECTOR FOR THE L3 EXPERIMENT

Authors
ADRIANI O ALCARAZ J AHLEN S AMBROSI G BASCHIROTTO A BATTISTON R BAY A BENCZE G BERTUCCI B BIASINI M BILEI GM BOBBINK GJ BOSETTI M BROOKS ML BUSENITZ J BURGER WJ CAMPS C CARIA M CASTELLINI G CHEN A COAN TE COMMICHAU V DIBITONTO D DUINKER P EASO S EXTERMANN P FIANDRINI E GOUGAS A HANGARTER K HAUVILLER C HERVE A HOU S JOSA I KAPUSTINSKI JS KIM D KINNISON WW KORNIS J KRASTEV VR LANDI G LEBEAU M LECOMTE P LEE DM LEISTE R LIN WT LOHMANN W MASSETTI R MILLS GB NOWAK H PASSALEVA G PAUL T PAULUZZI M PENSOTTI S RANCOITA PG RATTAGGI M ROSCH A SANTOCCHIA A SACHITZ M SCHMITZ P SCHONEICH B SERVOLI L SUSINNO G TERZI G TOTH J VIERTEL GM VOGT H WALDMEIER S WEGMANN J WEILL R XU J YEH SC ZHOU B
Citation
O. Adriani et al., THE NEW DOUBLE-SIDED SILICON MICROVERTEX DETECTOR FOR THE L3 EXPERIMENT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 431-435
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
348
Issue
2-3
Year of publication
1994
Pages
431 - 435
Database
ISI
SICI code
0168-9002(1994)348:2-3<431:TNDSMD>2.0.ZU;2-K
Abstract
The new technologies used in the construction of the L3 Silicon Microv ertex Detector (SMD) at LEP are presented. The SMD consists of two cyl indrical layers of double sided silicon sensors to provide very precis e measurements of both r(phi) and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate ) to the end of the mechanical structure. To get rid of the leakage cu rrents a new capacitor chip, with diode protection against overvoltage s, has been designed and used. In addition, a solution based on optode coupling has been adopted to read the silicon n-side strips operating at the bias voltage.