A. Adam et al., PERFORMANCE ON TEST BEAM OF THE L3 DOUBLE-SIDED SILICON MICROSTRIP DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 436-439
Two modules of the L3 Silicon Microvertex Detector (SMD) have been tes
ted on beam. The active area of the modules consists of double sided s
ilicon microstrip detectors; the implantation pitch is 25 mum and 50 m
um in the junction and ohmic side, respectively. The detectors are rea
d out by a VLSI radiation hard amplifier (SVX-H). The position resolut
ion, with a readout pitch of 50 mum and 200 mum for the two sides, is
determined to be 7.0 mum and 14.3 mum. A signal to noise ratio greater
-than-or-equal-to 16 and a detection efficiency greater-than-or-equal-
to 99% are measured for both sides.