PERFORMANCE ON TEST BEAM OF THE L3 DOUBLE-SIDED SILICON MICROSTRIP DETECTOR

Citation
A. Adam et al., PERFORMANCE ON TEST BEAM OF THE L3 DOUBLE-SIDED SILICON MICROSTRIP DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 436-439
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
348
Issue
2-3
Year of publication
1994
Pages
436 - 439
Database
ISI
SICI code
0168-9002(1994)348:2-3<436:POTBOT>2.0.ZU;2-1
Abstract
Two modules of the L3 Silicon Microvertex Detector (SMD) have been tes ted on beam. The active area of the modules consists of double sided s ilicon microstrip detectors; the implantation pitch is 25 mum and 50 m um in the junction and ohmic side, respectively. The detectors are rea d out by a VLSI radiation hard amplifier (SVX-H). The position resolut ion, with a readout pitch of 50 mum and 200 mum for the two sides, is determined to be 7.0 mum and 14.3 mum. A signal to noise ratio greater -than-or-equal-to 16 and a detection efficiency greater-than-or-equal- to 99% are measured for both sides.