LEC SI-GAAS DETECTORS FOR GAMMA-RAYS

Citation
M. Dogru et al., LEC SI-GAAS DETECTORS FOR GAMMA-RAYS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 510-513
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
348
Issue
2-3
Year of publication
1994
Pages
510 - 513
Database
ISI
SICI code
0168-9002(1994)348:2-3<510:LSDFG>2.0.ZU;2-L
Abstract
Detectors with a p-i-n structure based on Liquid Encapsulated Czochral ski (LEC) grown Semi-Insulating (SI) GaAs have been fabricated. The cu rrent-voltage (I-V) characteristics and their response to gamma-rays h ave been studied. Measurements of the peak charge collection efficienc y (cce) have been compared with a model assuming a uniform electric fi eld. The comparison indicates that this field is not uniform. The peak cce at 500 V is found to be 52% and 82% in 400 mum and 200 mum thick detectors respectively. The resolution of the Co-57 full energy peak i s between 10% and 13% at 400 V.