CONTACT ETCHING OF GAP SUBSTRATES BY GA-IN-P-AS SATURATED SOLUTION DURING LIQUID-PHASE HETEROEPITAXY

The results of a theoretical and experimental analysis of isothermal c ontact etching of GaP substrate by Ga-In-P-As saturated solution are p resented. Using the model of interatomic interaction at the interface during isothermal exposure of liquid and solid phases, conditions for thermodynamic quasiequilibrium of the above system are determined. Con sidering mass balance for the conditions of coherent lattice deformati on of the interface, the amount of contact etching of GaP substrate du ring typical conditions of liquid phase heteroepitaxy of GaxIn1-xPyAs1 -y layers is quantitatively determined.