LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS

Authors
KIRSTAEDTER N LEDENTSOV NN GRUNDMANN M BIMBERG D USTINOV VM RUVIMOV SS MAXIMOV MV KOPEV PS ALFEROV ZI RICHTER U WERNER P GOSELE U HEYDENREICH J
Citation
N. Kirstaedter et al., LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS, Electronics Letters, 30(17), 1994, pp. 1416-1417
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
17
Year of publication
1994
Pages
1416 - 1417
Database
ISI
SICI code
0013-5194(1994)30:17<1416:LLTIEF>2.0.ZU;2-H
Abstract
Low threshold, large T-o injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry .