A new technique for measuring the cavity loss of semiconductor lasers
is introduced. The cavity loss is deduced from the Fabry-Perot oscilla
tions in the spontaneous emission well below the bandgap of the active
region. This approach, referred to as the below-bandgap technique, is
simple, applicable to both Fabry-Perot and DFB lasers, and is capable
of measuring cavity losses with few restrictions on laser bias curren
t.