CONTROL OF PARALLEL CONDUCTION IN MOVPE GROWN INP BASED HFETS

Citation
Pc. Spurdens et al., CONTROL OF PARALLEL CONDUCTION IN MOVPE GROWN INP BASED HFETS, Electronics Letters, 30(17), 1994, pp. 1453-1455
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
30
Issue
17
Year of publication
1994
Pages
1453 - 1455
Database
ISI
SICI code
0013-5194(1994)30:17<1453:COPCIM>2.0.ZU;2-5
Abstract
Several methods for controlling the parallel conduction path at the su bstrate interface in InP based HFETs have been investigated. A novel c ombination of substrate annealing, gas phase etching and semi-insulati ng buffer layer is shown to provide the most reliable solution to this problem.