KINK-LIKE EFFECT IN LONG N-CHANNEL TWIN-GATE FULLY-DEPLETED SOI MOSFETS

Authors
DECEUSTER D FLANDRE D
Citation
D. Deceuster et D. Flandre, KINK-LIKE EFFECT IN LONG N-CHANNEL TWIN-GATE FULLY-DEPLETED SOI MOSFETS, Electronics Letters, 30(17), 1994, pp. 1456-1458
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
17
Year of publication
1994
Pages
1456 - 1458
Database
ISI
SICI code
0013-5194(1994)30:17<1456:KEILNT>2.0.ZU;2-F
Abstract
Twin-gate structures consisting of the series combination of two short -channel SOI MOSFETs of different lengths with a common gate have prev iously demonstrated kink-free and very flat output characteristics. Th e authors observe and explain that when using long-channel fully-deple ted twin-gates a kink-like effect reappears and seriously damages the output conductance.