ELECTROCHEMICAL-BEHAVIOR OF N-TYPE CDTE IN THE PRESENCE OF A MONOELECTRONIC OXIDIZING-AGENT (CE4+)

Citation
Fi. Marin et al., ELECTROCHEMICAL-BEHAVIOR OF N-TYPE CDTE IN THE PRESENCE OF A MONOELECTRONIC OXIDIZING-AGENT (CE4+), Journal of the Electrochemical Society, 141(9), 1994, pp. 2409-2413
Citations number
18
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
141
Issue
9
Year of publication
1994
Pages
2409 - 2413
Database
ISI
SICI code
0013-4651(1994)141:9<2409:EONCIT>2.0.ZU;2-W
Abstract
In this work, the hole-injection effect on n-CdTe from Ce4+ ions reduc tion and the ulterior oxidation of the material are presented. The oxi dizing-species concentration varies from 10(-4)M to 5 x 10(-2)M. Withi n this concentration range, the Levich law is observed for the cathodi c current. This indicates that the injection current is limited only b y Ce4+ diffusion from the solution. The presence or absence of a Te0 l ayer on the electrode surface does not modify the process, whether it comes from the Br2-MeOH etching or from the oxidation process. The etc hing of the material is linear with respect to the immersion time, and the oxidation process occurs in two steps: the formation of a Te(o) f ilm followed by its oxidation.