CHARACTERIZATION OF GALNP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS/

Authors
SONG JI CANEAU C HONG WP CHOUGH KB
Citation
Ji. Song et al., CHARACTERIZATION OF GALNP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS/, Electronics Letters, 29(21), 1993, pp. 1881-1883
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
21
Year of publication
1993
Pages
1881 - 1883
Database
ISI
SICI code
0013-5194(1993)29:21<1881:COGGDB>2.0.ZU;2-6
Abstract
The characteristics of InGaP/GaAs:C double-heterojunction bipolar tran sistors (DHBTs) with different collector layer designs are investigate d and compared with those of a single heterojunction bipolar transisto r. By inserting highly-doped n-type GaAs and InGaP layers in the colle ctor, current saturation characteristics of a DHBT, comparable to thos e of a single heterojunction bipolar transistor, are achieved. The bre akdown voltage of the DHBT was substantially higher than that of a sin gle-heteojunction bipolar transistor with the same collector doping an d thickness.