CURRENT GAINS OF ALAS GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH25-500-ANGSTROM BARRIER THICKNESS/

Authors
CHEN HR LEE CP CHANG CY TSAI KL TSANG JS
Citation
Hr. Chen et al., CURRENT GAINS OF ALAS GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH25-500-ANGSTROM BARRIER THICKNESS/, Electronics Letters, 29(21), 1993, pp. 1883-1884
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
21
Year of publication
1993
Pages
1883 - 1884
Database
ISI
SICI code
0013-5194(1993)29:21<1883:CGOAGT>2.0.ZU;2-I
Abstract
The current gain of an AlAs/GaS tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in th e range 25-200 angstrom and fall off for barrier thickness increasing from 200 to 500 angstrom. It is found that a thicker barrier can suppr ess the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.