IMPROVED THERMAL PERFORMANCE OF ALGAAS GAAS HBTS BY TRANSFERRING THE EPITAXIAL LAYERS TO HIGH-THERMAL-CONDUCTIVITY SUBSTRATES/

Authors
SULLIVAN GJ SZWED MK HARDWICK DA HIGGINS JA WALDROP JR CHANG MF
Citation
Gj. Sullivan et al., IMPROVED THERMAL PERFORMANCE OF ALGAAS GAAS HBTS BY TRANSFERRING THE EPITAXIAL LAYERS TO HIGH-THERMAL-CONDUCTIVITY SUBSTRATES/, Electronics Letters, 29(21), 1993, pp. 1890-1891
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
21
Year of publication
1993
Pages
1890 - 1891
Database
ISI
SICI code
0013-5194(1993)29:21<1890:ITPOAG>2.0.ZU;2-C
Abstract
The Letter reports the improved thermal performance of AlGaAs/GaAs het erojunction bipolar transistors (HBTs) by removal of the GaAs substrat e and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2 mm) epitaxial layers have been tran sferred, retaining a surface flatness suitable for high resolution pho tolithography.