Gj. Sullivan et al., IMPROVED THERMAL PERFORMANCE OF ALGAAS GAAS HBTS BY TRANSFERRING THE EPITAXIAL LAYERS TO HIGH-THERMAL-CONDUCTIVITY SUBSTRATES/, Electronics Letters, 29(21), 1993, pp. 1890-1891
The Letter reports the improved thermal performance of AlGaAs/GaAs het
erojunction bipolar transistors (HBTs) by removal of the GaAs substrat
e and transferring the epitaxial layers to optimal substrates (TELOS).
The thermal resistance of HBTs has been halved by transfer to diamond
substrates. 3 inch-diameter (76.2 mm) epitaxial layers have been tran
sferred, retaining a surface flatness suitable for high resolution pho
tolithography.