HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK/

Authors
GUY P WOODBRIDGE K HOPKINSON M
Citation
P. Guy et al., HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK/, Electronics Letters, 29(22), 1993, pp. 1947-1948
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
22
Year of publication
1993
Pages
1947 - 1948
Database
ISI
SICI code
0013-5194(1993)29:22<1947:HRAL1A>2.0.ZU;2-0
Abstract
Reflector stacks grown for use in devices operating at 1.55mum on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefor e we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternar y layers, which are approximately1% strained with respect to the subst rate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.