INTERMODULATION NULLING IN GAAS-MESFETS

Authors
PARKER AE SCOTT JB
Citation
Ae. Parker et Jb. Scott, INTERMODULATION NULLING IN GAAS-MESFETS, Electronics Letters, 29(22), 1993, pp. 1961-1962
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
22
Year of publication
1993
Pages
1961 - 1962
Database
ISI
SICI code
0013-5194(1993)29:22<1961:INIG>2.0.ZU;2-C
Abstract
The output conductance of gallium arsenide MESFETs, traditionally cons idered detrimental to device performance, is exploited to effect the c ancellation of distortion. This occurs in a common-source amplifier wi th correct loading and provides useful gain. A technique for character ising the device is presented to allow calculation of optimum load for minimum distortion.