ELECTRICAL AND OPTICAL-PROPERTIES OF HIGH-PERFORMANCE MOCVD GROWN (ALXGA1-X)YIN1-YP VISIBLE LIGHT-EMITTING-DIODES

Authors
MORGAN DV ALIYU YH BUNCE RW BARNES S BOS T
Citation
Dv. Morgan et al., ELECTRICAL AND OPTICAL-PROPERTIES OF HIGH-PERFORMANCE MOCVD GROWN (ALXGA1-X)YIN1-YP VISIBLE LIGHT-EMITTING-DIODES, Electronics Letters, 29(22), 1993, pp. 1991-1992
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
22
Year of publication
1993
Pages
1991 - 1992
Database
ISI
SICI code
0013-5194(1993)29:22<1991:EAOOHM>2.0.ZU;2-7
Abstract
Electrical and optical properties of high performance (Al(x)Ga1-x)yIn1 -(y)P light emitting diodes (LEDs) are described. The current transpor t mechanism is dominated by surface recombination. The orange diodes e xhibit a lower surface recombination current level than the correspond ing yellow and green LEDs. The device performances compare favourably with the commercially available LEDs in the orange to green spectral r egion.