1-PERCENT EFFICIENCY AL0.3GA0.7AS PLANAR-DOPED-BARRIER ELECTRON EMITTERS

Authors
JIANG WN MISHRA UK
Citation
Wn. Jiang et Uk. Mishra, 1-PERCENT EFFICIENCY AL0.3GA0.7AS PLANAR-DOPED-BARRIER ELECTRON EMITTERS, Electronics Letters, 29(22), 1993, pp. 1997-1999
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
22
Year of publication
1993
Pages
1997 - 1999
Database
ISI
SICI code
0013-5194(1993)29:22<1997:1EAPEE>2.0.ZU;2-3
Abstract
Owing to a larger bandgap and a higher breakdown field, higher emissio n efficiency and emission current density have been obtained from Al0. 3Ga0.7As planar-doped-barrier electron emitters (PDBEEs) compared with GaAs PDBEEs. Preliminary experiments gave an emission efficiency of 1 % and a current density of 2.6Acm-2 from a 5 x 144mum2 emission region with an anode bias of 100 V. Further improvement of the device perfor mance can be achieved by optimising the device design and surface acti vation process.