IMPROVEMENT IN THE DETERMINATION OF ACCURACY OF ENTHALPY OF IONIZATION FROM THE ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY

In this paper we propose to use a combination of a modified isothermal Deep Level Transient Spectroscopy (IDLTS) method with optical excitat ion and a filtering method of multi-exponential decays for IDLTS signa l represented by a nonexponential transient capacitance. Excellent agr eement with published results is achieved using this method for the in vestigation of a hole trap response (HL4) interfering with other traps in Schottky barriers that were fabricated on an epitaxial GaAs layer grown by VPE on bulk N-GaAs.