THE MODIFIED KAWS MODEL-BASED ON RECTANGULAR VOLTAGE PULSES FOR THE CALCULATION OF THE CHARGE-PUMPING CURRENT IN MIS TRANSISTORS

The charge pumping current results from recombination associated with the SiO2-Si interface traps under the gate of a MISFET when a voltage pulse is applied to the gate. The modified Kaw's model is proposed whi ch predicts this current as a function of frequency, amplitude and ave rage voltage of pulses with peak-to-peak amplitudes larger than the di fference between the flatband and inversion voltages and with pulse tr ansitions fast enough so that negligible capture or emission occurs du ring the transition. The presented modification of Kaw's model of the charge pumping effect enables to compute the dependences of the charge pumping current for various types of MIS transistors with different d imensions manufactured by different technologies.