1.6 MU-M SEMICONDUCTOR DIODE-PUMPED THULIUM-DOPED FLUORIDE FIBER LASER AND AMPLIFIER OF VERY HIGH-EFFICIENCY

Authors
PERCIVAL RM SZEBESTA D SELTZER CP PERRIN SD DAVEY ST LOUKA M
Citation
Rm. Percival et al., 1.6 MU-M SEMICONDUCTOR DIODE-PUMPED THULIUM-DOPED FLUORIDE FIBER LASER AND AMPLIFIER OF VERY HIGH-EFFICIENCY, Electronics Letters, 29(24), 1993, pp. 2110-2112
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
24
Year of publication
1993
Pages
2110 - 2112
Database
ISI
SICI code
0013-5194(1993)29:24<2110:1MSDTF>2.0.ZU;2-9
Abstract
Results on a 1.6mum semiconductor diode pumped thulium fibre laser ope rating in the 1.9mum region are presented for the first time. A minimu m threshold of 0.60mW and a maximum slope efficiency of 80% with respe ct to launched pump power have been observed. In addition gain values of 14.5dB have been achieved for 2.98mW of launched pump power indicat ing that a gain efficiency of 4.9dB/mW is possible.